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Re: cyg_flash_program_mask

From: Andrew Lunn <andrew at lunn dot ch>
To: Andrew Dyer <amdyer at gmail dot com>
Cc: Tom Schouten <tom at zwizwa dot be>, ecos-discuss at ecos dot sourceware dot org
Date: Wed, 16 Feb 2011 06:46:20 +0100
Subject: Re: [ECOS] cyg_flash_program_mask
References: <4D5AA4D9.7070307@zwizwa.be> <AANLkTimqsQNV+QqipDY3YC3qiV7htU_D9rS9uHBO4aYR@mail.gmail.com>

On Tue, Feb 15, 2011 at 12:47:49PM -0600, Andrew Dyer wrote:
> You have to be very careful doing this.  At least some NAND flash
> parts have restrictions on how many 'partial page program' cycles you
> can do.  For the part I am using, the restriction is 4 for normal
> memory pages, and 8 for the one time programmable area.

Hi Andrew

So for the none one-time blocks, after 4 partial writes you need to do
an erase, before you can do more partial rights? Or are you saying
only 4 ever?

What part is this?

     Thanks
	Andrew

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Follow-Ups:
- Re: cyg_flash_program_mask
  - From: Andrew Dyer

References:
- cyg_flash_program_mask
  - From: Tom Schouten
- Re: cyg_flash_program_mask
  - From: Andrew Dyer

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